雪崩击穿光电二极管阵列,avalanche photodiode array
1)avalanche photodiode array雪崩击穿光电二极管阵列
1.For detection of Chemiluminescence,a kind of signal acquisition system based onavalanche photodiode array(SiPM) is introduced.以开发便携式化学发光免疫分析仪为应用目标,进行了基于雪崩击穿光电二极管阵列(SiPM)化学发光测量系统软硬件平台的设计。
2)avalanche photodiode arrays雪崩二极管阵列
3)APD雪崩光电二极管
1.Implementation of Compensation for Bias Voltage of Thermo-drift forAPDs by Using AC1056;用AC1056实现对雪崩光电二极管温漂的偏压补偿
2.In order to implement dynamic bias voltage compensation for the thermal drift ofAPD gain,high precision A/D and D/A circuits are designed.为实现对雪崩光电二极管(APD)增益温漂的动态偏压补偿,设计了高精度的ADC和DAC电路系统,对APD可以达到毫伏级的偏压控制精度和0。
3.This paper discusses a new kind of detecting system for bioluminescence which based onAPD.本文介绍了一种基于雪崩光电二极管的生物发光检测仪器新方案,并与传统的微光测量方案和器件进行了比较。
英文短句/例句
1.planar avalanche photodiode平面雪崩光电二极管
2.gallium arsenide avalanche photodiode砷化镓雪崩光电二极管
3.avalanche photodiode coupler雪崩光电二极管耦合器
4.semiconductor avalanche photodiode半导体雪崩光电二极管
5.silicon-avalanche photodiode detector硅雪崩光电二极管检测器
6.Schottky-barrier avalanche photodiode肖特基势垒雪崩光电二极管
7.APD Signal Detecting Method Based on Wavelet Transform基于小波变换的雪崩光电二极管信号检测方法
8.Research on Multi-stepped Planar InGaAs/InP Avalanche Photodiodes平面型InP/InGaAs雪崩光电二极管多级台阶结构研究
9.The Research of the Detecting System for Bioluminescence Based on APD基于APD雪崩光电二极管的生物发光检测的研究与应用
10.Design of Detecting System for Chemiluminescence Based on Avalanche Photodiode Array基于雪崩光电二极管阵列的化学发光测量系统设计
11.The thoery, structure, characteristics, and process of the superlattice avalanche photodiode are presented.报道了超晶格雪崩光电二极管的工作原理、构、性及其制造工艺。
12.Temperature and Voltage characteristic for InGaAs/InP Avalanche photodiodeInGaAs/InP雪崩二极管的温度-电压特性
13.avalanche transit time diode雪崩渡越时间二极管
14.avalanche diode integrated oscillator雪崩二极管集成振荡器
15.At normal operating voltage, the TVS diode is inactive, like an open circuit.雪崩崩溃二极管是以反向电流的方式,连接在线路上。
16.IMPATT (Impact Avalanche and Transist Time Diode )碰撞雪崩及渡越时间二极管
17.impact avalanch transit time diode碰撞雪崩渡越时间二极管
18.impatt oscillator碰撞雪崩渡越时间二极管振荡器
相关短句/例句
avalanche photodiode arrays雪崩二极管阵列
3)APD雪崩光电二极管
1.Implementation of Compensation for Bias Voltage of Thermo-drift forAPDs by Using AC1056;用AC1056实现对雪崩光电二极管温漂的偏压补偿
2.In order to implement dynamic bias voltage compensation for the thermal drift ofAPD gain,high precision A/D and D/A circuits are designed.为实现对雪崩光电二极管(APD)增益温漂的动态偏压补偿,设计了高精度的ADC和DAC电路系统,对APD可以达到毫伏级的偏压控制精度和0。
3.This paper discusses a new kind of detecting system for bioluminescence which based onAPD.本文介绍了一种基于雪崩光电二极管的生物发光检测仪器新方案,并与传统的微光测量方案和器件进行了比较。
4)avalanche photodiode(APD)雪崩光电二极管
1.In order to ensure the optimum operating of the avalanche photodiode(APD) in the laser gyro under different temperature conditions,an effect of the temperature on the avalanche gain is analyzed based on the principle of APD multiplication.为保证激光陀螺中雪崩光电二极管(APD)在温度变化的情况下始终处于最佳工作状态,从APD的倍增机理出发,分析了温度对雪崩增益的影响,建立了虚警率与APD倍增因子的数学模型,并采用监测雪崩噪声平均过阈率的方法,得到器件的实际击穿电压温度系数γ=6。
2.The edge pre-breakdown of planar-type avalanche photodiode(APD) is resulted from the intense electric field at the junction bend.平面型雪崩光电二极管(APD)在结弯曲处具有高的电场,导致在结边缘的提前击穿。
3.According to the requirements and the characteristics of the single-photon detect System,a water-cooling system based on thermoelectricity cooling accompanied by a temperature control instrument was developed to reduce the temperature of the detector avalanche photodiode(APD).根据单光子探测系统的要求及其特点,采用半导体制冷技术,研制出了用于单光子探测的雪崩光电二极管(APD)的水循环散热制冷腔。
5)avalanche photodiode雪崩光电二极管
1.Study on application ofavalanche photodiode in phase laser distance measurement;雪崩光电二极管在相位式激光测距仪中的应用
2.Status of HgCdTeavalanche photodiode arrays碲镉汞雪崩光电二极管发展现状
3.An InGaAs/InAlAsavalanche photodiode(APD) with the back illumination is designed and simulated by the MEDICI software.设计了一种InGaAs/InAlAs雪崩光电二极管(APD),并利用MEDICI软件进行了模拟仿真。
6)avalanche photodiodes雪崩光电二极管
1.A measurement system is set up which could measure static optoelectronic characteristics ofavalanche photodiodes (APDs).利用该系统对光敏面的直径为500μm的台面型InGaAs/InP雪崩光电二极管(APDs)进行测试。
2.The development of GaN-basedavalanche photodiodes was reviewed in this letter.文章简单回顾了氮化镓基雪崩光电二极管的发展现状,从制作高响应率、低漏电流的雪崩器件出发,详细阐明了制作氮化镓基雪崩光电二极管的工艺过程,特别考虑了干法刻蚀带来的物理损伤以及后续的消除损伤处理。
3.Based on the characteristic of PINavalanche photodiodes and carrier rate equations,a mathematic model is presented.针对PIN雪崩光电二极管结构的特殊性,以载流子速率方程为基础,进行适当的假设和拟合,将光、电子量和转化过程完全用数学模型表示,并在Matlab中进行了模拟计算,其结果与实验数据符合较好。
延伸阅读
二极管阵列检测器分子式：CAS号：性质：采用光电二极管列阵为检测元件，构成多通道，并行工作，同时检测由光栅分光，再入射到列阵式接收器上的全部波长的光讯号，然后，对二极管列阵快速扫描采集数据，经计算机处理后可得到时间-波长-吸收值三维图形。可提供色谱分析的丰富信息。二极管列阵检测器的特点是令光线先通过试样池，然后由一系列分光技术，使所有波长的光在接收器上同时被检测。主要用于高效液相色谱(HPLC)。
