微波等离子体化学气相沉积,MPCVD
1)MPCVD微波等离子体化学气相沉积
1.SiC NANOWIRES GROWN ON SILICON(100) WAFER BYMPCVD METHOD;微波等离子体化学气相沉积方法在Si衬底上生长SiC纳米线
2.Chain-like carbon nanotube(CNTs) thin films were rapidly deposited on Ti-coated Al2O3 substrate byMPCVD(microwave plasma enhanced chemical vapor deposition) process for only 1min with CH4 and H2 as reaction gases.以镀有Ti层的Al2O3为衬底,在微波等离子体化学气相沉积系统中,以CH4和H2为反应气体,快速制备了链状碳纳米管薄膜(沉积时间仅1 min)。
3.C3N4 thin films have been prepared on Pt substrates by microwave plasma chemical vapor deposition (MPCVD) method.采用微波等离子体化学气相沉积法（MPCVD），使用高纯N2（99。
英文短句/例句
1.Diamond thin films grown up by microwave plasma CVD微波等离子体化学气相沉积金刚石簿膜
2.WORKING PRINCIPLE OF MICROWAVE PLASMA CVD SET UP微波等离子体化学气相沉积装置的工作原理
3.TEM Study on Diamond Films Deposited by MPCVD;微波等离子体化学气相沉积金刚石薄膜的电子显微学分析
4.ANALYSIS OF THE MORPHOLOGIES OF DIAMOND FILM GROWN BY MICROWAVE PLASMA CVD METHOD微波等离子体化学气相沉积金刚石薄膜形貌分析
5.NEW MICROWAVE PLASMA CVD SET UP FOR DIAMOND FILM GROWTH新型微波等离子体化学气相沉积金刚石薄膜装置
6.Research on High Quality Diamond Films in Microwave Plasma CVD;微波等离子体化学气相沉积法制备高质量金刚石膜研究
7.New-style Nano-sheets Carbon Films Fabricated by Microwave Plasma Chemical Vapor Deposition微波等离子体化学气相沉积法制备的新型纳米片状碳膜(英文)
8.Application of a Magnetic Mirror in Direct Coupler MPCVD Diamond Film Preparation Device磁镜场在直接耦合式微波等离子体化学气相沉积金刚石膜制备装置中的应用
9.plasma activated chemical vapour deposition等离子体化学气相沉积
10.Study on Device of Magneto-active Plasma Enhanced Chemical Vapor Deposition;磁激活等离子体增强化学气相沉积设备的研制
11.The Study on DLC Films Deposited by PECVD;等离子体增强化学气相沉积DLC膜的研究
12.Study on device of magneto-active PECVD;磁激活增强等离子体化学气相沉积设备的研制
13.Study on Characteristic of Si_3N_4 Nanopowder Prepared by ICPECVD;ICP等离子体增强化学气相沉积制备纳米粉体氮化硅特性研究
14.Atmospheric-pressure Plasma Chemical Vapor Deposition for Polycrystalline Silicon Preparation from SiCl_4 and OES Diagnosis由SiCl_4制备多晶硅的大气压等离子体化学气相沉积及发射光谱诊断
15.The Study of the Deposition of SiO_2 Films with RF Cold Plasma at Atmospheric-pressure;常压射频低温等离子体增强化学气相沉积二氧化硅薄膜的研究
16.Study on Synthetic Silica Glass by Plasma Chemical Vapor Deposition;等离子体化学气相沉积合成石英玻璃的基础研究
17.Synthesis and Characterization of Carbon Nanotubes by Plasma-enhanced Chemical Vapor Deposition;等离子体增强化学气相沉积制备碳纳米管及其表征
18.One-dimensional Nanomaterials: Plasma and Chemical Vapor-Phase Synthesis and Characterizations;等离子体及化学气相沉积法合成一维纳米材料及性能研究
相关短句/例句
microwave plasma chemical vapor deposition微波等离子体化学气相沉积
1.Usingmicrowave plasma chemical vapor deposition technology,diamond films were deposited on the silicon wafer of 51~76 mm in diameter.利用自行设计微波等离子体化学气相沉积装置在直径51 mm和76 mm硅片上制备金刚石薄膜。
2.A diamond film deposited on hard-metal was obtained bymicrowave plasma chemical vapor deposition of a methan-hydrogen-oxygen gas mixture.采用ＣＨ＿４－Ｈ＿２－Ｏ＿２微波等离子体化学气相沉积法在硬质合金表面沉积金刚石薄膜，研究了ＴｉＣ中间过渡层对金刚石薄膜沉积效果的作用及粘结机理。
3.The globe-like diamond microcrystalline aggregates were fabricated bymicrowave plasma chemical vapor deposition (MPCVD) method.在覆盖金属钛层的陶瓷上,利用微波等离子体化学气相沉积(MPCVD)法制备出类球状微米金刚石聚晶膜。
3)microwave plasma CVD微波等离子体化学气相沉积
1.In this paper, carbon nanotubes (CNTs) are synthesized bymicrowave plasma CVD directly from an inexpensive raw material source, ilmenite.以廉价钛铁矿为原料,利用微波等离子体化学气相沉积法,直接制备了纳米碳管,并在适当的条件下,同时将其中的钛氧化物碳化而获得纳米碳管碳化钛复合粉体材料。
4)microwave plasma chemical vapor deposition (MPCVD)微波等离子体化学气相沉积
5)MWPCVD微波等离子体化学气相沉积
6)MWCVD微波等离子体化学气相沉积
1.By means of microwave chemical vapor deposition (MWCVD) method,CH 3OH/H 2 gas mixtures are used as a gas source,along with a 30nm amorphous thick silicon as a transition layer,a diamond film can successfully be grown on a stainless steel substrate,with a lowest growth temperature of 420℃.利用甲醇－氢（ＣＨ３ＯＨ－Ｈ２）混合气体为气源，３０ｎｍ厚的无定形硅为过渡层，借助于微波等离子体化学气相沉积（ＭＷＣＶＤ）成功地将金刚石薄膜生长在不锈钢上，其最低生长温度可至４２０℃，并且甲醇－氢混合气体比传统的甲烷－氢（ＣＨ４－Ｈ２）更具优势，测试表明这种金刚石薄膜有希望作为耐磨层在工业上应
2.Is this study, cemented tungsten carbide (WC-wt8%Co) was diamond coated by the microwave plasma chemical vapor deposition (MWCVD) method.在微波等离子体化学气相沉积装置中 ,以WC -8%Co为基体 ,采用氢等离子体脱碳、磁控溅射镀W、碳化等方法 ,制备了微晶WC过渡层。
延伸阅读
微波等离子体化学气相沉积分子式：CAS号：性质：用微波等离子体激活化学反应，进行气相沉积的技术。微波等离子体增强了气体反应活性，加速气相分解反应和表面原子的迁移，使沉积过程可以在较低生长温度下进行。常用设备在一低压化学气相沉积(CVD)反应管上交叉安装一共振腔和与之匹配的微波发射器。在CVD反应管中被共振腔包围气体可通过微波作用形成等离子体，微波频率通常为2.45GHz，发射功率通常在几百瓦至1kW以上。该方法对于低熔点和高温下不稳定的化合物的薄膜生长更为合适。
