肖特基势垒二极管,Schottky barrier diode
1)Schottky barrier diode肖特基势垒二极管
1.I-V characteristics of 4H-SiCSchottky barrier diodes under high temperature;高温Ti/4H-SiC肖特基势垒二极管的特性
2.The whole circuit uses low power consumption and low voltage parts such as a new high speed digital optical-coupler HCPL-060L andSchottky barrier diode etc.介绍了RS-232接口与RS-485接口无源光电隔离转换器的设计,采用简单实用的串口窃电技术,整个电路使用了新型高速数字光电耦合器HCPL-060L、肖特基势垒二极管等低功耗、低工作电压的元器件,并详细说明了硬件的设计。
3.Th eSchottky barrier diodes are fabricated during the 6H-SiC epilayers grow n by using chemical vapor deposition on commercially available single-crystal 6 H-SiC wafers.在可商业获得的 N型 6 H - Si C晶片上 ,通过化学气相淀积 ,进行同质外延生长 ,在此结构材料上 ,通过热蒸发 ,制作 Ni/6 H- Si C肖特基势垒二极管 。
英文短句/例句
1.A STUDY ON STATIC I-V CHARACTERISTICS FOR SILICON CARBIDE SCHOTTKY BARRIER DIODES;碳化硅肖特基势垒二极管静态特性的研究
2.Effects of High-temperature Electron Irradiation in n-GaN Schottky Barrier Diode;n-GaN肖特基势垒二极管的高温电子辐照效应
3.Gamma-ray radiation effect on Ni/4H-SiC SBDNi/4H-SiC肖特基势垒二极管的γ射线辐照效应
4.As an example, Schottky barrier diode characteristics is simulated using this method.以肖特基势垒二极管为例,应用该方法,实现了高接触势垒情形下的正反向电流模拟。
5.schottky barrier photodiode肖特基势垒光电二极管
6.Schottky-barrier avalanche photodiode肖特基势垒雪崩光电二极管
7.In this paper, a new method of complete calibration of six-portmeasurement system is presented which uses the low-barrier Schottky diode detectors for power detection.本文提出了用肖特基低势垒二极管检波器检测功率的六端口测量系统整体校准的新方法。
8.low-power Schottky diode低功率肖特基二极管
9.schottky gate fet肖特基势垒栅场效应晶体管
10.enhancement type schottky barrier fet增强型肖特基势垒场效应晶体管
11.Studies of Characteristics of 6H-Sic Schottky Diodes;6H-SiC肖特基二极管的特性研究
12.silicon high-current Schottky barrier switching diode硅大电流肖特基开关二极管
13.Analysis and Modeling of GaAs Schottky Diodes for THz Application太赫兹GaAs肖特基二极管电路模型研究
14.schottky barrier mos肖特基势垒栅金属氧化物半导体
15.The Schottky Barrier at Grain Boundaries of Polycrystalline Ferroelectric Semiconductors多晶铁电半导体晶界处的肖特基势垒
16.Abnormal Breakdown Diagram of the Schottky Barrier Diodes肖特基二极管异常击穿特性曲线的研究
17.Life Prediction of Power Schottky Barrier Diode Based on the Method of Parameter Degeneration基于参数退化法评价功率肖特基二极管寿命
18.Schottky emitter type transistor肖特基发射极型晶体管
相关短句/例句
SBD肖特基势垒二极管
1.In addition, we fabricated Au and Ni Schottky Barrier Diodes (SBDs) on Silicon surface of n-type 6H-SiC.本文讨论了n型6H-SiC欧姆接触的制备工艺及其基本电学及热学特性,并在此基础上采用金属Au及Ni在n型6H-SiC硅面(0001晶向)上制备了具有一定特性的肖特基势垒二极管。
3)Schottky diodes肖特基势垒二极管
1.The key device of the mixer is a pair of GaAs beam lead antiparallelSchottky diodes.混频的核心元件是反向并联的GaAs梁式引线肖特基势垒二极管对。
4)Schottky barrier diodes肖特基势垒二极管
1.Analytical model for I-V characteristics of 4H-SiCSchottky barrier diodes;4H-SiC肖特基势垒二极管伏-安特性的解析模型
5)schottky diode肖特基势垒二极管
1.The manufacturing process of ntype 6Hsilicon carbide Schottky diode with electrode deposited by DCmagnetron sputtering has been studied in the paper The electrical and temperature characteristics of Pt/6HSiC Schottky diode were studied Results show that the device has good rectifying property, lower reverse current and high voltage It can also operate stably at high temperature (600 °C)采用直流磁控溅射法、Pt作肖特基接触的工艺,制作了N型6H-SiC肖特基势垒二极管,对肖特基势垒二极管的电学特性及温度特性进行了研究。
6)SiC-Based Schottky Barrier DiodeSiC肖特基势垒二极管
1.Application of Power Factor Correction Circuits withSiC-Based Schottky Barrier Diode;SiC肖特基势垒二极管在PFC电路中的应用
延伸阅读
肖特基势垒(Schottkybarrier)肖特基势垒(Schottkybarrier)金属和半导体接触形成半导体表面势垒,此势垒又称肖特基势垒。