CVD,chemical vapor deposition
1)chemical vapor depositionCVD
1.The effects of adding fluorine, chlorine, phosphorus and oxygen in C - H systems and the effects of adding oxygen, fluorine in C - S systems on the chemical transport reaction in the production of carbon nanotube (CNT) viachemical vapor deposition(CVD) have been calculated by using software developed by scientists at Russian Academy of Science.利用俄罗斯科学院研制的软件计算分析了CVD法制备碳纳米管过程中在碳氢体系添加氟、氯、磷、氧等元素及在碳硫体系中加入氧、氟等元素对于化学传递反应的影响,结果表明,这些元素的加入有利于传递反应的进行。
2.Influences on the percentage of deposited carbon from hydrocarbon viachemical vapor deposition at 700 K to (1 500 K,)101×10~3 Pa and CO viachemical vapor deposition at 700 K to (1 200 K),101×10~3 Pa were calculated by use of the CVD (chemical vapor deposition) software developed by the scientists of Russia Academy of Science.利用俄罗斯科学院研制的CVD(chemicalvapordeposition)软件计算了在101×103Pa和700K～1500K烃催化热解以及在101×103Pa和700K～1200KCO催化热解影响碳沉积率的因素,并根据碳沉积相边界点的反应物组成绘制了碳沉积边界曲线,预测了碳沉积区,计算结果对多壁碳纳米管的制备提供了有关的信息。
3.With TiCl4+O2 reaction system, nano-TiO2 powders were prepared by radio frequency plasmachemical vapor deposition (RF-PCVD).采用高频等离子体化学气相沉积法(RF-PCVD)法,以TiCl4 + O2为反应体系,制备出了纳米级的TiO2粉体。
英文短句/例句
1.The Preparation of Cubic Boron Nitride Thin Films by ECR CVD System and Study of Their Properties;ECRCVD制备立方氮化硼薄膜及性能研究
2.The Fabrication of Continuous High Performance SiC Fiber by Chemical Vapor Deposition;CVD法制备高性能SiC连续纤维技术
puter Control System of Producing Carbon Nanotubes with CVD;CVD法制备纳米碳管的计算机控制系统
4.The Study of A-Si-H Films Prepared by MWECR CVD;MWECRCVD制备a-Si:H薄膜光稳定性研究
5.Simulation of Growth Process of Titania Nanoparticles Synthesized by Flame CVD Process;火焰CVD法制备TiO_2纳米颗粒的数值模拟
6.Reserches of Equipment Design and Process Mechanics about CVD(CVI) Silica;CVD/CVI氧化硅设备研制及工艺机理探索
7.Oxidation Behaviors and Mechanisms of Boron-Containing CVD SiC Complex Coating;含硼CVD SiC复合涂层的氧化行为与机理
8.The Preparation of Device-Quality Hydrogenated Amorphous Silicon Thin Films by Mwecr-Cvd Assisted by Hot-Wire;热丝辅助MWECR-CVD制备器件级非晶硅薄膜
9.Deposition Process Study of Device Quality a-Si:H Film by Method of MWECR CVD with High Deposition Rate;MWECRCVD高速制备a-Si：H薄膜的工艺研究
10.The Study of the Coating of Silicon Dioxide by CVD Utilizing TEOS-O_3;CVD法采用TEOS-O_3沉积二氧化硅膜
11.Synthesis and Characterization of Aligned Carbon Nanotubes Prepared by CVD;CVD法制备定向纳米碳管及其表征
12.Study on Growth and Optical Emission of a-SiN_x: H Films Prepared by ECR-CVD;ECR-CVD制备a-SixN：H薄膜及其发光性能的研究
13.Control System Development of Vacuum Induction CVI/CVD Processes;真空感应CVI/CVD过程控制系统开发
14.Fundamental Study on High-efficiency Polishing for CVD Diamond Thick Film;CVD金刚石厚膜高效抛光的基础研究
15.Study of MWECR CVD Deposition Technique for a-Si:H and Properties of a-Si:H;a-Si:H薄膜的MWECRCVD制备及特性研究
16.Study on Tribochemical Polishing Technique of CVD Diamond Film;CVD金刚石膜摩擦化学抛光技术研究
17.Study on CMP Slurry of CVD Diamond Film;CVD金刚石膜化学机械抛光液的研制
18.Technical Study on Deposition of B-C Films by MWECR CVD Method;MWECRCVD法制备B-C薄膜的工艺研究
相关短句/例句
CVD methodCVD法
1.Industrialization synthesis for carbon nanotube byCVD method;CVD法工业化生产纳米碳管的研究
2.The function of carrier gas in the synthesis for carbon nanotubes byCVD method;载气在CVD法制备纳米碳管工艺中的作用
3.Study on Production (CVD method), Characterization of Carbon Nanotubes and Application in Catalysis;纳米碳管的制备（CVD法）、表征及其在催化中的应用
3)CVDCVD法
1.Synthesis of Multiwall Carbon Nanotubes byCVD Method;多壁碳纳米管的CVD法制备
2.Investigation of a new type nano carbon film prepared by high energy plasma assistedCVD;高能等离子体辅助CVD法新型纳米碳膜的制备及分析
puter Simulation for the Preparation of Fe 6 5%Si Sheet by theCVD Method;CVD法制取Fe-6-5% Si薄板的扩散工艺计算机模拟
4)chemical vapor depositionCVD法
1.C plasmachemical vapor deposition in industrial set up for deposition of TiN coatings on cemented carbide SC30 was performed.研究表明 :PCVD法 Ti N系薄膜的微观组织形态明显优于同类的CVD法薄膜 ,PCVD法薄膜晶粒尺寸细小、均匀 ,形态圆整 ,组织致密 ;CVD法薄膜晶粒形态为多边形 ,尺寸较粗大、不均匀 ,组织致密性差 ;PCVD法 Ti N系薄膜的韧性和结合力等力学性能可达到或优于同类CVD法薄膜 ;虽然 PCVD法薄膜的氯含量 (约为 2 % )远高于CVD法薄膜 (约为 0 。
5)Thermal CVD热CVD
1.The Effect of Silane Flow Rate on Nano-Silicon Powder Production by SilaneThermal CVD;硅烷流量对硅烷热CVD法制备纳米硅粉的影响
6)CVDCVD 法
1.The composite powder is prepared by mixing pure Cu and CNT-Cu composite powder,which is in-situ synthesized byCVD using a novel Ni/Y catalyst supported on copper for the first time.本文首次采用CVD 法在以铜为载体的催化剂 Ni/Y 上原位制备了 CNT—Cu 复合粉末,然后将此复合粉末与一定量的纯铜粉研磨混合后采用粉末冶金法制备了 CNTs 增强 Cu 基复合材料。
延伸阅读
CVD分子式：CAS号：性质：利用气相化学反应在基底上沉积另一种固体材料的方法，常用于制取固体薄膜。化学气相沉积过程包括气相反应物的生成、气相反应物的输运和沉积。利用化学气相沉积方法可以得到从非晶态、晶态到外延单晶薄膜等各种材料，是一种应用非常广泛的化学合成方法。化学气相沉积还可以用于制备多种高熔点化合物薄膜。例如，高熔点的四氮化三硅可以利用氨和硅烷反应得到。其他如二氧化硅和氧化铝等薄膜也可以用此法制取。化学气相沉积在半导体材料和器件的制备中具有重要的用途。在半导体器件的制备中常常需要在半导体表面生长一定厚度的另一种电学性能不同的半导体单晶薄膜，这种薄膜可以利用化学气相沉积或化学气相外延的方法制取。
