微晶硅薄膜,microcrystalline silicon thin film
1)microcrystalline silicon thin film微晶硅薄膜
1.We also discussed the growth mechanism of themicrocrystalline silicon thin films from the aspect .实验采用等离子体增强化学气相沉积(PECVD)法在玻璃衬底上制备了微晶硅薄膜。
2.Non-uniformity ofmicrocrystalline silicon thin film deposited by VHF-PECVD along the growth direction was studied.本文研究了采用VHF PECVD技术制备的微晶硅薄膜的纵向均匀性。
3.The crystallization affected by annealing studied onmicrocrystalline silicon thin films fabricated on tantalum;获得了可用于太阳能电池的微晶硅薄膜的最佳晶化参数。
英文短句/例句
1.Study on the Microstructure of Microcrystalline Silicon Thin Films by VHF-PECVDVHF-PECVD制备微晶硅薄膜的微结构研究
2.Influence of boron on the properties of intrinsic microcrystalline silicon thin films硼对沉积本征微晶硅薄膜特性的影响
3.An optical emission spectroscopy study on the high rate growth of microcrystalline silicon films高速沉积微晶硅薄膜光发射谱的研究
4.Fabrication of the Microcrystalline Silicon Materials and Solar Cells by PECVD;PECVD法制备微晶硅薄膜材料及太阳能电池
5.Investigation on Activation Energy of Intrinsic Microcrystalline Silicon Thin Films Deposited by VHF-PECVDVHF-PECVD沉积本征微晶硅薄膜激活能特性研究
6.High rate growth and electronic property of μc-Si∶H微晶硅薄膜高速沉积及电学性质的研究
7.Optimized Growth Conditions and High Deposition Rate of μc-Si∶H Films氢化微晶硅薄膜的两因素优化及高速沉积
8.Single-chamber deposition of intrinsic microcrystalline silicon thin film and its application in solar cells单室沉积本征微晶硅薄膜及其在电池中的应用
9.Influence of Hydrogen on Microcrystalline Silicon Thin Film in Low Temperature Deposition and Annealling Process氢在微晶硅薄膜低温沉积及退火过程中的影响
10.Effects of Drift Due to Chamber"s Long-time Usage on Microcrystalline Silicon Properties腔室长时间使用造成的工艺漂移对微晶硅薄膜性质的影响
11.Effects of hydrogen plasma pretreatment of substrate on the growth of microcrystalline silicon film衬底H等离子体预处理时间对微晶硅薄膜生长的影响
12.A spectroscopic ellipsometry study of the abnormal scaling behavior of high-rate-deposited microcrystalline silicon films by VHF-PECVD technique椭圆偏振技术研究VHF-PECVD高速沉积微晶硅薄膜的异常标度行为
13.Study of a-Si:H Microstructure by MWECR CVD Technique;MWECR CVD制备氢化非晶硅薄膜的微结构研究
14.Influence of Substrate Temperature on the Growth of μc-SiGe Thin Film衬底温度对氢化微晶硅锗薄膜生长的影响
15.Fabrication of P-type Amorphous Silicon Thin Films and Poly-Silicom by PECVD;PECVD法制备P型非晶硅薄膜及多晶硅薄膜
16.Metal-Induced Crystallization of Amorphous Silicon and Silicon Germanium Films非晶硅和非晶硅锗薄膜的金属诱导结晶
17.Preparation of Poly-Silicon Thin Film in Low Temperature Using SiH_4 as Gas Source by ECR-PECVD;以硅烷为气源用ECR-PECVD制备多晶硅薄膜
18.The Effect of Crystallization Ratio on Dark Conductivity of Poly-Silicon Thin Films;多晶硅薄膜晶化率对暗电导率的影响
相关短句/例句
Microcrystalline silicon thin films微晶硅薄膜
1.A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
2.Deposition conditions were optimized to improve the deposition rate of microcrystalline silicon thin films.本文以微晶硅薄膜的沉积速率为重点，以优化沉积条件、提高微晶硅薄膜的沉积速率为目标，通过射频等离子体化学气相沉积(RF-PECVD)和甚高频等离子体化学气相沉积(VHF-PECVD)，系统地研究了沉积气压、射频功率、气体流量及硅烷浓度等沉积条件对薄膜的沉积速率、晶化率、择优晶向、晶粒大小、表面形貌、结构演化的影响，并对等离子体成膜机理、薄膜机构演变机理做了初步的探究。
3.Microcrystalline silicon thin films prepared at different deposition parameters using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术制备了系列不同沉积条件的微晶硅薄膜。
3)microcrystalline silicon film微晶硅薄膜
1.Studies on surface roughness and growth mechanisms ofmicrocrystalline silicon films by grazing incidence X-ray reflectivity;微晶硅薄膜的表面粗糙度及其生长机制的X射线掠角反射研究
2.Influence of silane concentration on microstructural and electrical properties ofmicrocrystalline silicon films;硅烷浓度对微晶硅薄膜微结构及电学性质的影响
3.A spectroscopic ellipsometry study of the abnormal scaling behavior of high-rate-depositedmicrocrystalline silicon films by VHF-PECVD technique椭圆偏振技术研究VHF-PECVD高速沉积微晶硅薄膜的异常标度行为
4)microcrystalline silicon films微晶硅薄膜
5)μc-Si:H微晶硅薄膜
1.Hydrogenated microcrystalline silicon(μc-Si:H)films with a high deposition rate of 1.使用热丝化学气相沉积技术制备微晶硅薄膜(沉积速度为1。
6)p-type μc-Si:H thin filmsp型微晶硅薄膜
1.Using plasma enhanced chemical vapor deposition (RF-PECVD) technique p-type μc-Si∶H thin films with the thickness of about 40nm are prepared on the glass substrate when B2H6 is used as dopant.利用射频等离子体增强化学气相沉积(RF-PECVD)技术,以B2H6为掺杂剂,在玻璃衬底上制备了厚度为40nm左右的p型微晶硅薄膜。
延伸阅读
微晶硅分子式：CAS号：性质：又称纳米晶硅。晶粒在10nm左右的多晶硅材料。其性质不同于大晶粒多晶硅，又不同于非晶硅。带隙可达2.4eV(晶体硅为1.12eV)，电子和空穴迁移率均高于非晶硅两个数量级以上。光吸收系数介于晶体硅和非晶硅之间。采用辉光放电化学气相沉积法，减压化学沉积法，磁控溅射法，非晶硅热处理法等制备。可用作太阳电池窗口材料、异质结双极型晶体管、薄膜晶体管等。
