电老化阈值,electrical degradation threshold
1)electrical degradation threshold电老化阈值
1.The results show that theelectrical degradation threshold of original and corona-resistance polyimide film is 35 kV/mm and 45 kV/mm, and decreases with the increasing of aging electric field.结果表明,原始及耐电晕聚酰亚胺薄膜老化前的电老化阈值分别为35 kV/mm和45 kV/mm,并随着老化电场的增加而下降。
2.Theelectrical degradation threshold is40MV/m for 100CR and35MV/m for100HN,and decreases with the increasing of .采用电导电流方法分别测试了杜邦公司纳米杂化聚酰亚胺薄膜(100CR)和原始聚酰亚胺薄膜(100HN)未老化、10 MV/m、20 MV/m电晕强度8 h老化后的电导电流,发现杂化膜的电流量比原始膜大近一个数量级,杂化膜未老化时的阈值为40 MV/m,而原始膜为35 MV/m,且两者的电老化阈值均随电老化强度的增加而减小。
2)threshold voltage阈值电压
1.Study onthreshold voltage model of strained SiGe quantum well channel SOI PMOSFET;应变SiGe SOI量子阱沟道PMOSFET阈值电压模型研究
2.Analyticalthreshold voltage model for fully depleted SOI MOSFETs;全耗尽SOIMOSFET阈值电压解析模型
3.2-Dthreshold voltage model for short-channel MOSFET with quantum-mechanical effects;考虑量子效应的短沟道MOSFET二维阈值电压模型
英文短句/例句
1.The Threshold Voltage and Saturation Voltage of Twisted Nematic Liquid Crystal Affected by Electric Field;电场作用下扭曲向列液晶的阈值电压
2.Design of Voltage Reference Based on CMOS Threshold Voltage基于CMOS阈值电压的基准电路设计
3.Study of E-O Characteristics of Low-threshold Voltage Flexible PDLC Films低阈值电压柔性PDLC膜电光特性的研究
4.low threshold mos低阈值电压金属氧化物半导体
5.Study of GaAs Threshold Voltage Uniformity and Measurement System;GaAs阈值电压均匀性与测试系统的研究
6.Threshold voltage model of strained Si channel nMOSFET应变Si沟道nMOSFET阈值电压模型
7.Analysis of 2-D Short-Channel MOSFET Threshold Voltages Model二维短沟道MOSFET阈值电压分析模型
8.Temperature Characteristics Model of Threshold Voltage in Small Size VDMOS小尺寸VDMOS阈值电压温度特性模型
9.The threshold voltage of SiC Schottky barrier source/drain MOSFETSiC肖特基源漏MOSFET的阈值电压
10.Low-Threshold Varistors Based on Oxide Thin Films;基于氧化物薄膜的低阈值电压压敏电阻
11.Ultra-Low-Threshold Varistors Based on Columnar ZnO Thin Films基于柱状ZnO薄膜的超低阈值电压压敏电阻
12.This peak voltage setting becomes the threshold used for calculation of the voltage response curve for the instrument.这个峰值电压设置为阈值电压，用来计算仪器的电压响应曲线。
13.Electro-Optical Properties of Low-Threshold Voltage PDLC Films低阈值电压聚合物分散性液晶膜的电光特性
14.Threshold Voltage Model of Small MOSFET and Preparation of High-k Gate Dielectric;小尺寸MOSFET阈值电压模型及高k栅介质制备
15.Analysis of Threshold Voltage and Magic Number Based on the Software of WAT Analyzer基于WAT Analyzer软件的阈值电压计算及magic number测定
16.Analysis of Threshold Voltage Decreasing for Single-Gate and Double-Gate SOI MOSFET短沟道SOI中的阈值电压下降问题的研究
17.Design and Analysis of Electrostatic Microrelay with Low Threshold Voltage in MEMS基于MEMS技术的低阈值电压静电型微继电器的设计与研究
18.Voltage probe warning threshold( s) set successfully.（电压探测器警告阈值已成功设置。
相关短句/例句
threshold voltage阈值电压
1.Study onthreshold voltage model of strained SiGe quantum well channel SOI PMOSFET;应变SiGe SOI量子阱沟道PMOSFET阈值电压模型研究
2.Analyticalthreshold voltage model for fully depleted SOI MOSFETs;全耗尽SOIMOSFET阈值电压解析模型
3.2-Dthreshold voltage model for short-channel MOSFET with quantum-mechanical effects;考虑量子效应的短沟道MOSFET二维阈值电压模型
3)conductive threshold导电阈值
1.This article has reported the influence ofconductive threshold, varieties and amount of coupling agent of copper-alkyd electromagnetic shield conductive coatings on its early conductivity and stability of conductivity.研究了铜-醇酸电磁屏蔽导电涂料的导电阈值以及偶联剂的种类、用量对其初始导电性能和导电稳定性的影响。
4)threshold field阈值电场
1.The electro-optic effect utilizing the change of a light scattering by transition between wound and unwound states of the helicoidal structure characteristic of ferroelectric liquid crystal shows a lowthreshold field and a short response time in range of EMBED Equation .在电场作用下液晶的螺旋态和螺旋展开态之间的转换，由此引起光散射的变化所产生的电光效应，其阈值电场极小，并与盒厚和温度有关，响应时间在μｓ级。
2.The field emission characteristics of carbon nanotubes (CNTs) including turn-on field,threshold field, density of emission current, current stability and electronic energy distribution are discussed in detail.详细论述了碳纳米管的场致发射特性,包括开启电场、阈值电场、发射电流密度、发射电流的稳定性及场发射电子能量分布等;阐述了场发射的机制;分析了发射特性与其几何结构、吸附态及尖端缺陷等因素的关系;并简要介绍了碳纳米管场发射特性在平板显示领域中的实际应用。
5)threshold current阈值电流
1.Feedback light decreasesthreshold current of laser diode and increases the static light intensity.反馈光会引起激光二极管阈值电流减小,静态输出光强变化几倍,使激光二极管工作在实际的阈值电流之上。
2.By analyzing the conditions which can increase the power conversion efficiency(PCE)of diode,it is found that decreasing the work voltage,serial resistance and thethreshold current can increase the PCE.分析了提高激光器电光转换效率的几种途径,认为降低激光器工作电压、串联电阻和阈值电流可以提高激光器转换效率。
3.VCSEL arrays containing 7,19,and 37 elements are fabricated,and the characteristics of thethreshold current and the far-field angle are discussed.制作了含7,19,37个单元的列阵,讨论了它们的阈值电流和远场特性。
6)QMS阈值电离
1.Design and Study of Ionizer ofQMS with Threshold Ionization Function;具有阈值电离能力的四极质谱离化器的研制
延伸阅读
地理阈值亦称地理临界值。它将地理系统中的不同状态加以分隔与区分，把某一性质的表现范围加以限制和说明。在此种意义上，地理阈值代表了系统的“状态空间”的非连续性。在一般叙述中，常把地理阈值等同于地理系统边界条件，但二者是有区别的：如果两种不同的状态同时存在于相同的边界条件之中时，地理阈值的表现可能是“非传递性”的转移；而当两种不同状态分置于不同的边界条件之中时，地理阈值的表现可能是“过渡性”地转移。无论是非传递性转移的地理阈值，还是过渡性转移的地理阈值，都使地理系统中不可能具备唯一的、通用的或稳定的解。所谓“解”都是有条件的，都是在地理阈值约束下的解。
